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1 article(s) from Greco, Giuseppe

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures

Filippo Giannazzo,
Gabriele Fisichella,
Aurora Piazza,
Salvatore Di Franco,
Giuseppe Greco,
Simonpietro Agnello and
Fabrizio Roccaforte

Beilstein J. Nanotechnol. 2017, 8, 254–263, doi:10.3762/bjnano.8.28

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Figure 1: (a) Schematic including an optical image of a MoS₂ transistor with the SiO₂/Si backgate and Ni/Au s...

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Figure 2: Semilog scale plot (a) and linear scale plot (b) of the transfer characteristics (I_D−V_G) measured a...

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Figure 3: (a) Semilog scale plot of the transfer characteristics (I_D−V_G) in the subthreshold regime at differ...

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Figure 4: (a) Linear scale plot of I_D (left axis) and of the transconductance g_m (right axis) at V_DS = 0.1 V ...

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Figure 5: (a) Temperature dependence of the field effect mobility extracted from the linear region of the I_D−V...

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Figure 6: Output characteristics I_D−V_DS for different gate bias values from −56 to 0 V at different temperatu...

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Figure 7: (a) On-resistance R_on vs 1/(V_G−V_th,lin) at different temperatures. (b) Temperature dependence of R_C....

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Figure 8: (a) Output characteristics (I_D−V_DS) for different gate bias values from −56 to 0 V at T = 298 K. (b...

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Full Research Paper

Published 25 Jan 2017

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Impact of contact resistance on the electrical properties of MoS2 transistors at practical operating temperatures

Impact of contact resistance on the electrical properties of MoS₂ transistors at practical operating temperatures